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Low-temperature layer splitting of (100) GaAs by He+H coimplantation and direct wafer bonding

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5 Author(s)
Radu, I. ; Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany ; Szafraniak, I. ; Scholz, R. ; Alexe, M.
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The present letter introduces a low-temperature GaAs layer splitting approach by He+H coimplantation which—in combination with direct wafer bonding—enables monolithic integration of GaAs with different substrates. The influence of He+H coimplantation on blistering and layer splitting of GaAs is studied and the optimum coimplantation conditions are determined. Thin GaAs layers are transferred onto Si after bonding of He+H coimplanted GaAs and Si substrates via a spin-on glass intermediate layer and subsequent annealing at only 225 °C for 14 h. Cross-sectional transmission electron microscopy investigations show a high quality of the GaAs/SOG bonding interface. © 2003 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:82 ,  Issue: 15 )