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Surface segregation of boron in BxGa1-xAs/GaAs epilayers studied by x-ray photoelectron spectroscopy and atomic force microscopy

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7 Author(s)
Dumont, H. ; LMI, Université Claude-Bernard Lyon I, UMR 5615 CNRS, 43 Bd du 11 Novembre 1918, 69622 Villeurbanne Cedex, France ; Rutzinger, D. ; Vincent, C. ; Dazord, J.
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The behavior of boron incorporation into GaAs has been studied by x-ray photoelectron spectroscopy, x-ray diffraction, and atomic force microscopy. As the boron content of the film was increased, both the characteristic peak for the B 1s core level at 188 eV and As Auger transition (260 eV) could be detected by XPS. At 550–600 °C, single crystalline films could only be grown for x≤0.06. Upon increasing the diborane flux in the gas phase, the film stoichiometry and the boron surface composition evolved rapidly towards a boron-rich subarsenide compound. This trend is followed by a clear degradation of the surface morphology and an increase in the surface roughness. A surface segregation of boron is suggested due to the high diborane vapor supersaturation needed during growth. © 2003 American Institute of Physics.

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Applied Physics Letters  (Volume:82 ,  Issue: 12 )