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Browse Journals & Magazines > Applied Physics Letters ...> Volume:81 Issue:9 Help

Quantum-ballistic transport in an etch-defined Si/SiGe quantum point contact

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4 Author(s)
Wieser, U. ; Lehrstuhl für Werkstoffe und Nanoelektronik, Ruhr-Universität Bochum, D-44780 Bochum, Germany ; Kunze, U. ; Ismail, K. ; Chu, J.O.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1503157 

Ballistic constrictions are fabricated on a high-mobility Si/SiGe strained-layer heterostructure which exhibit conductance quantization in units of 4e2/h at T=4.2 K. Under finite drain voltage a half-plateau develops at 2e2/h and a series of oscillations appear which enable us to extract the energy separation ΔEN+1,N between successive one-dimensional subbands. The result is ΔE2,1=2.0 meV and ΔE3,2=1.4 meV. © 2002 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:81 ,  Issue: 9 )

Date of Publication: Aug 2002

Page(s):
1726 - 1728
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1503157
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Aug 2002

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