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Impact of annealing-induced compaction on electronic properties of atomic-layer-deposited Al2O3

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4 Author(s)
Afanasev, V.V. ; Department of Physics, University of Leuven, Celestijnenlaan 200D, 3001 Leuven, Belgium ; Stesmans, A. ; Mrstik, B.J. ; Zhao, C.

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Atomic-layer-deposited layers of Al2O3 on (100)Si are shown to transform into γ-Al2O3 when treated at temperatures above 800 °C. The compaction process leads to widening of the alumina band gap and causes an ≈0.5 eV upward shift of the oxide conduction band with respect to the Fermi level of Au and Al. In the case of incomplete transformation of the Al2O3 film, large leakage currents across the oxide are observed, which are explained by the formation of conducting grain boundaries similar to those formed on γ-alumina surfaces. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:81 ,  Issue: 9 )

Date of Publication:

Aug 2002

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