Cart (Loading....) | Create Account
Close category search window
 

Enhanced ferroelectric properties in laser-ablated SrBi2Nb2O9 thin films on platinized silicon substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Das, Rasmi R. ; Department of Physics, University of Puerto Rico, San Juan, Puerto Rico 00931-3343 ; Bhattacharya, P. ; Katiyar, Ram S.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1502440 

Non-c-axis-oriented SrBi2Nb2O9 (SBN) thin films were grown on Pt/TiO2/SiO2/Si substrates using the pulsed-laser-deposition technique. X-ray diffraction results confirmed the textured growth of SBN thin films along (115) and (200) orientations. The increase in the value of the dielectric permittivity and decrease in the tangential loss of the films with an increase in annealing temperature were attributed to grain size dependence. SBN thin films annealed at 750 °C exhibited a maximum value of the dielectric constant of ∼346 with a dissipation factor of 0.02. Thin films with certain deposition parameters exhibited the highest remanent polarization (Pr) and coercive field, 25.7 μC/cm2 and 198 kV/cm, respectively. There was minimal (≪20%) degradation in the switchable polarization (P*-P) after 1010 switching cycles. At lower field, the leakage current follows ohmic behavior, and at higher field, up to 100 kV/cm, the leakage current density was about 5×10-7A/cm2. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:81 ,  Issue: 9 )

Date of Publication:

Aug 2002

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.