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Thick LiNbO3 layers on diamond-coated silicon for surface acoustic wave filters

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5 Author(s)
Dogheche, E. ; Institut Electronique et Microélectronique du Nord (IEMN), DOAE—Dépt. Matériaux pour Intégration en Microélectronique Microsystèmes (MIMM), Le Mont-Houy Valenciennes 59309, France ; Sadaune, V. ; Lansiaux, X. ; Remiens, D.
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Surface acoustic wave (SAW) technology based on lithium niobate/diamond/silicon multilayered structures has been investigated due to the large demand of frequency filters for communication systems, particularly for cellular phones. Thick LiNbO3 layers (∼1 μm) with a good morphology, i.e., surface roughness lower than 10 nm have been grown at 490 °C on diamond-coated silicon substrates by multistep rf magnetron sputtering. A SAW devices operating at 300 MHz was designed and fabricated in order to validate the proposed structure; in particular, our main objective was to verify the high velocity in the layered structure. Preliminary filter responses were very promising: the SAW velocity was estimated to 8200 m/s and the coupling factor was K2∼0.93%. The film growth, the technology, and the electrical measurements are described in this letter. © 2002 American Institute of Physics.

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Applied Physics Letters  (Volume:81 ,  Issue: 7 )