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Terahertz frequency difference from vertically integrated low-temperature-grown GaAs photodetector

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10 Author(s)
Peytavit, E. ; Institut d’Electronique et de Microélectronique du Nord, University of Lille, 59652 Villeneuve d’Ascq, France ; Arscott, S. ; Lippens, D. ; Mouret, G.
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We report on the development of a photoconductive detector based on low-temperature-grown GaAs which is vertically integrated with terahertz spiral antennas. A non steady-state velocity overshoot effect was expected in the photoresponse with a responsivity of 0.04 A/W at a bias voltage of 8 V. Photomixing experiments using two optical 0.8 μm beating lasers show a 3 dB bandwith of 700 GHz with a radiation power at terahertz frequency of 0.5 μW under 2×30 mW optical pumping. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:81 ,  Issue: 7 )