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Nonlinear change of refractive index of Co3O4 thin films induced by semiconductor laser (λ=405 nm) irradiation

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4 Author(s)
Yamamoto, Hiroki ; Nanotechnology Glass Project, New Glass Forum, Tsukuba Research Laboratory, Tsukuba Research Consortium, 9-9, 5-Chome, Tokodai, Tsukuba, Ibaraki, 300-2635 Japan ; Tanaka, Shuhei ; Naito, Takashi ; Hirao, Kazuyuki

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Nonlinear change of the refractive index (n) and extinction coefficient (k) of Co3O4 thin films induced by a laser with λ=405 nm (hν=3.06 eV) irradiation was evaluated using equipment having an ellipsometric optical configuration. Nonlinear refractive index (n2) and extinction coefficient (k2) were +1.0×10-10m2/W (positive) and -2.6×10-11m2/W (negative), respectively. n2 and k2 at λ=650 nm (hν=1.91 eV) were -5.5×10-11m2/W and -8.7×10-11m2/W (both have negative signs). From these results and the fact that the Co3O4 thin film has the band-gap energy of 2.06 eV, the band filling effect can be seen as one of the most probable models describing the large nonlinear change of n and k of Co3O4 thin film. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:81 ,  Issue: 6 )

Date of Publication:

Aug 2002

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