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Enhanced growth of CoSi2 on epitaxial Si0.7Ge0.3 with a sacrificial amorphous Si interlayer

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7 Author(s)
Wu, W.W. ; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China ; Chiang, T.F. ; Cheng, S.L. ; Lee, S.W.
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Enhanced growth of CoSi2 on epitaxial Si0.7Ge0.3 has been achieved with an interposing amorphous-Si (a-Si) layer. The a-Si layer was used as a sacrificial layer to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming CoSi2 on Si0.7Ge0.3 grown by molecular beam eptiaxy. The process promises to be applicable to the fabrication of high-speed Si–Ge devices. © 2002 American Institute of Physics.

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Applied Physics Letters  (Volume:81 ,  Issue: 5 )