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SiGe microcavities with Ge dots were fabricated by employing strain-balanced SiGe/Si Bragg reflectors, and it was observed that photoluminescence from Ge dots embedded in the microcavity structure was significantly modulated due to the cavity effect. The characteristic luminescence of the microcavity was observed up to 200 K, and the thermal activation energy of the luminescence was largely improved compared with that of cavities with quantum wells. © 2002 American Institute of Physics.
Published in:
Applied Physics Letters
(Volume:81
,
Issue:
5
)
Date of Publication: Jul 2002
- Page(s):
- 817 - 819
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.1496142
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Jul 2002
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