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All-optical single-electron read-out devices based on GaN quantum dots

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2 Author(s)
DAmico, Irene ; Istituto Nazionale per la Fisica della Materia (INFM) and Institute for Scientific Interchange, via Settimio Severo 65, I-10133 Torino, Italy ; Fossi, Fausto

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We study few-particle interactions in GaN-coupled quantum dots and discuss how the built-in field characteristic of these structures strongly reinforce dipole–dipole and dipole–monopole interactions. We introduce a semi-analytical model that allows for a rapid and easy estimate of the magnitude of few-particle interactions and whose predictions are closer than 10% to “exact” results. We apply our study to the design of an all-optical read-out device that exploits long-range dipole–monopole interactions and may be also used to monitor the charge status of a quantum dot system. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:81 ,  Issue: 27 )