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Bulk and surface contributions to resonant second-harmonic generation from Si(001) surfaces

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2 Author(s)
An, Yong Qiang ; JILA, University of Colorado and National Institute of Standards and Technology, Boulder, Colorado 80309-0440 ; Cundiff, S.T.

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The spectra of the isotropic and anisotropic contributions to second-harmonic generation from modified Si(001) surfaces are separated using polarization selection and rotational anisotropy. A bulk anisotropic resonance is observed at a two-photon energy of 3.42±0.01 eV. The isotropic surface contributions for native oxide Si and thermal oxide Si show peaks at 3.39±0.01 eV and 3.35±0.01 eV, respectively. Interference between these contributions and the bulk signal can shift the apparent resonance position if they are not separated. The surface produces a noninterfering contribution that is comparable to the interfering contribution for H-terminated Si but negligible for oxidized silicon. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:81 ,  Issue: 27 )

Date of Publication:

Dec 2002

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