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Epitaxial growth and dielectric properties of homologous Srm-3Bi4TimO3m+3 (m=3,4,5,6) thin films

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6 Author(s)
Zhang, S.T. ; Department of Materials Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People’s Republic of China ; Chen, Y.F. ; Sun, H.P. ; Pan, X.Q.
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The first four members of Bi-layered Srm-3Bi4TimO3m+3 homologous series with m=3, 4, 5, and 6, i.e., Bi4Ti3O12, SrBi4Ti4O15, Sr2Bi4Ti5O18, and Sr3Bi4Ti6O21, were grown on SrTiO3 (001) single-crystal substrates by pulsed-laser deposition. X-ray diffraction and high-resolution transmission electron microscopy (HRTEM) reveal that the films grew epitaxially with in-plane epitaxial alignment of [11¯0]Srm-3Bi4TimO3m+3∥[010]SrTiO3. HRTEM cross-sectional images show that the films with m=3, 4, and 5 are nearly free of intergrowth, whereas a number of growth defects were observed in the film with m=6. Using an evanescent microwave probe, the room-temperature dielectric constants of these epitaxial films are measured to be 221±13, 205±15, 261±29, and 249±17 for films with m=3, 4, 5, and 6, respectively. © 2002 American Institute of Physics.

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Applied Physics Letters  (Volume:81 ,  Issue: 26 )