By Topic

Epitaxial growth and dielectric properties of homologous Srm-3Bi4TimO3m+3 (m=3,4,5,6) thin films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Zhang, S.T. ; Department of Materials Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People’s Republic of China ; Chen, Y.F. ; Sun, H.P. ; Pan, X.Q.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1530741 

The first four members of Bi-layered Srm-3Bi4TimO3m+3 homologous series with m=3, 4, 5, and 6, i.e., Bi4Ti3O12, SrBi4Ti4O15, Sr2Bi4Ti5O18, and Sr3Bi4Ti6O21, were grown on SrTiO3 (001) single-crystal substrates by pulsed-laser deposition. X-ray diffraction and high-resolution transmission electron microscopy (HRTEM) reveal that the films grew epitaxially with in-plane epitaxial alignment of [11¯0]Srm-3Bi4TimO3m+3∥[010]SrTiO3. HRTEM cross-sectional images show that the films with m=3, 4, and 5 are nearly free of intergrowth, whereas a number of growth defects were observed in the film with m=6. Using an evanescent microwave probe, the room-temperature dielectric constants of these epitaxial films are measured to be 221±13, 205±15, 261±29, and 249±17 for films with m=3, 4, 5, and 6, respectively. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:81 ,  Issue: 26 )