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AlGaN layers grown on GaN using strain-relief interlayers

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8 Author(s)
Chen, C.Q. ; Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208 ; Zhang, J.P. ; Gaevski, M.E. ; Wang, H.M.
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We report on a study to compare the growth of thick AlGaN layers on GaN with different strain-relief interlayers. A set of ten period AlN/AlGaN superlattices was found to be the most efficient approach for the strain relief. The superlattice interlayer not only decreases the tensile strain but also improves the crystal structural quality. Thus, 2-μm-thick, high quality n+-Al0.2Ga0.8N layers can be grown on GaN epilayers without any cracks. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:81 ,  Issue: 26 )

Date of Publication:

Dec 2002

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