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Experimental investigation of the effect of wetting-layer states on the gain–current characteristic of quantum-dot lasers

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4 Author(s)
Matthews, D.R. ; Department of Physics and Astronomy, Cardiff University, Cardiff CF24 3YB, United Kingdom ; Summers, H.D. ; Smowton, P.M. ; Hopkinson, M.

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Using experimental measurements of the gain–current characteristic as a function of temperature in InGaAs quantum-dot lasers, we demonstrate that it is the population of wetting-layer states that leads to a saturation of the population inversion in dot states and hence to the saturation of gain in a quantum-dot laser. At 300 K, the maximum modal gain for a three-layer structure is reduced from 53 to 14 cm-1. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:81 ,  Issue: 26 )