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Electroluminescence from strain-compensated Si0.2Ge0.8/Si quantum-cascade structures based on a bound-to-continuum transition

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11 Author(s)
Diehl, L. ; Paul Scherrer Institut, CH-5232 Villigen, Switzerland ; Mentese, S. ; Muller, E. ; Grutzmacher, D.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1528729 

Intersubband electroluminescence from strain-compensated Si/Si0.2Ge0.8 quantum cascade (QC) structures, consisting of up to 30 periods grown by molecular beam epitaxy on Si0.5Ge0.5 pseudosubstrates is reported. The design of the active region is based on a so-called “bound-to-continuum transition.” The intersubband radiation is emitted at a wavelength of 7 μm and is polarized, as expected for intersubband transitions between heavy hole states. A good agreement with photocurrent measurements is also found. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:81 ,  Issue: 25 )

Date of Publication:

Dec 2002

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