Single-electron transistors and memory cells with Au colloidal islands

In this study, single-electron transistors and memory cells with Au colloidal islands linked by C₆₀ derivatives have been fabricated by hybridization of top–down advanced electron-beam lithography and bottom–up nanophased-material synthesis techniques. Low-temperature transport measurements exhibit clear Coulomb-blockade-type current–voltage characteristics and hysteretic-type gate-modulated current. The hysteresis is attributed to the presence of electrically isolated charge–storage islands. With the guidance provided by Monte Carlo simulation, we propose a circuit model and give an estimate of the sample parameters. © 2002 American Institute of Physics.