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Single-electron transistors and memory cells with Au colloidal islands

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4 Author(s)
Wu, C.S. ; Graduate Institute of Electro-Optical Engineering and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, Republic of China ; Chen, C.D. ; Shih, S.M. ; Su, W.F.

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In this study, single-electron transistors and memory cells with Au colloidal islands linked by C60 derivatives have been fabricated by hybridization of top–down advanced electron-beam lithography and bottom–up nanophased-material synthesis techniques. Low-temperature transport measurements exhibit clear Coulomb-blockade-type current–voltage characteristics and hysteretic-type gate-modulated current. The hysteresis is attributed to the presence of electrically isolated charge–storage islands. With the guidance provided by Monte Carlo simulation, we propose a circuit model and give an estimate of the sample parameters. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:81 ,  Issue: 24 )

Date of Publication:

Dec 2002

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