By Topic

Role of SrRuO3 buffer layers on the superconducting properties of YBa2Cu3O7 films grown on polycrystalline metal alloy using a biaxially oriented MgO template

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Jia, Q.X. ; Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico, 87545 ; Foltyn, S.R. ; Arendt, P.N. ; Groves, J.R.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1527699 

A SrRuO3 (SRO) buffer layer has been developed for growth of superconducting YBa2Cu3O7 (YBCO) thick films on polycrystalline metal substrates where a biaxially oriented MgO layer—produced by ion-beam-assisted deposition (IBAD)—was used as a template. By using such an architecture, we have routinely deposited YBCO films with an in-plane mosaic spread in the range of 3°–6° in full width at half maximum. A critical current density of 3.0×106A/cm2 in self-field at 75 K for a film thickness of over 1.3 μm has been achieved. We believe that the SRO buffer layer plays a significant role in the much improved performance of YBCO conductors built on IBAD MgO. The features of SRO, such as good lattice match with both MgO and YBCO, excellent thermal stability in an oxidizing environment, and planarization of growing surface, make it the ideal choice as the buffer layer for high-performance superconductor coatings. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:81 ,  Issue: 24 )