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A key to room-temperature ferromagnetism in Fe-doped ZnO: Cu

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7 Author(s)
Han, S-J. ; Department of Physics and Electron Spin Science Center, Pohang University of Science and Technology, Pohang, 790-784, South Korea ; Song, J.W. ; Yang, C.-H. ; Park, S.H.
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Successful synthesis of room-temperature ferromagnetic semiconductors, Zn1-xFexO, is reported. The essential ingredient in achieving room-temperature ferromagnetism in bulk Zn1-xFexO was found to be additional Cu doping. A transition temperature as high as 550 K was obtained in Zn0.94Fe0.05Cu0.01O; the saturation magnetization at room temperature reached a value of 0.75μB per Fe. A large magnetoresistance was also observed below 100 K. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:81 ,  Issue: 22 )

Date of Publication:

Nov 2002

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