By Topic

Growth of GaN films on porous SiC substrate by molecular-beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
6 Author(s)
Yun, F. ; Virginia Commonwealth University, Department of Electrical Engineering, Richmond, Virginia 23284 ; Reshchikov, M.A. ; He, L. ; Morkoc, H.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1524304 

Porous SiC (PSiC) substrates were used for the growth of GaN by reactive molecular-beam epitaxy with ammonia as the nitrogen source. Improved quality of GaN films has been demonstrated for growth on PSiC substrates, as compared to that on standard 6H–SiC substrates. Cross-sectional transmission electron microscopy and electron diffraction showed a reduction in dislocation density and a higher degree of lattice and thermal relaxation in the GaN films grown on porous substrates. The submicron GaN films exhibit a rocking curve linewidth of 3.3 arcmin for (0002) diffraction and 13.7 arcmin for (101¯2) diffraction. Low-temperature photoluminescence showed an excitonic transition with a full width at half maximum of 9.5 meV at 15 K, as well as high quantum efficiency, on the GaN layer grown on PSiC when the thin skin layer on porous SiC was removed before growth. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:81 ,  Issue: 22 )