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Effect of substitutionally dissolved Ce in Si on the magnetic and electric properties of magnetic semiconductor Si1-xCex films

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3 Author(s)
Yokota, T. ; Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Sakai, Osaka 599-8531, Japan ; Fujimura, N. ; Ito, T.

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A magnetic semiconductor Si:Ce thin film was prepared using a vacuum evaporation system with electron-beam guns. The as-deposited thin film was amorphous and exhibited n-type conduction. It showed temperature dependence of resistivity (ρ–T), as in a normal semiconductor, and a diamagnetic property. By annealing at 973 K, however, the film epitaxially crystallizes and the conduction changes to the p-type. The resistivity of the film abruptly decreases by three orders of magnitude below 30 K, unlike that of the as-deposited film. The magnetic susceptibility measured at a low magnetic field (750 Oe) also decreases around the same temperature in ρ–T curves. These magnetic and carrier transport phenomena are responsible for the substitutionally dissolved Ce in Si. © 2002 American Institute of Physics.

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Applied Physics Letters  (Volume:81 ,  Issue: 21 )