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Fabrication of submicron-scale SrTiO3-δ devices by an atomic force microscope

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5 Author(s)
Pellegrino, L. ; INFM-LAMIA, Dipartimento di Fisica, via Dodecaneso 33, 16146 Genova, Italy ; Pallecchi, I. ; Marre, D. ; Bellingeri, E.
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By applying a negative voltage to the conducting tip of an atomic force microscope, we modify on submicron-scale semiconducting oxygen deficient SrTiO3-δ thin films grown on LaAlO3 substrates. In comparison with the as-grown film, the modified regions present different electrical and structural properties, which can be exploited to realize submicrometer circuits. After a discussion on the mechanisms of the process, we report a prototype of a SrTiO3-δ-based sidegate field-effect transistor, showing a 4% modulation of channel resistivity with gate voltages up to 40 V. © 2002 American Institute of Physics.

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Applied Physics Letters  (Volume:81 ,  Issue: 20 )