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Browse Journals & Magazines > Applied Physics Letters ...> Volume:81 Issue:19 Help

Field emission from well-aligned zinc oxide nanowires grown at low temperature

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6 Author(s)
Lee, C.J. ; Department of Nanotechnology, Hanyang University, Seoul 133-791, Korea ; Lee, T.J. ; Lyu, S.C. ; Zhang, Y.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1518810 

Field electron emission from vertically well-aligned zinc oxide (ZnO) nanowires, which were grown by the vapor deposition method at a low temperature of 550 °C, was investigated. The high-purity ZnO nanowires showed a single crystalline wurtzite structure. The turn-on voltage for the ZnO nanowires was found to be about 6.0 V/μm at current density of 0.1 μA/cm2. The emission current density from the ZnO nanowires reached 1 mA/cm2 at a bias field of 11.0 V/μm, which could give sufficient brightness as a field emitter in a flat panel display. Therefore, the well-aligned ZnO nanowires grown at such low temperature can promise the application of a glass-sealed flat panel display in a near future. © 2002 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:81 ,  Issue: 19 )

Date of Publication: Nov 2002

Page(s):
3648 - 3650
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1518810
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Nov 2002

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