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Field emission from well-aligned zinc oxide nanowires grown at low temperature

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6 Author(s)
Lee, C.J. ; Department of Nanotechnology, Hanyang University, Seoul 133-791, Korea ; Lee, T.J. ; Lyu, S.C. ; Zhang, Y.
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Field electron emission from vertically well-aligned zinc oxide (ZnO) nanowires, which were grown by the vapor deposition method at a low temperature of 550 °C, was investigated. The high-purity ZnO nanowires showed a single crystalline wurtzite structure. The turn-on voltage for the ZnO nanowires was found to be about 6.0 V/μm at current density of 0.1 μA/cm2. The emission current density from the ZnO nanowires reached 1 mA/cm2 at a bias field of 11.0 V/μm, which could give sufficient brightness as a field emitter in a flat panel display. Therefore, the well-aligned ZnO nanowires grown at such low temperature can promise the application of a glass-sealed flat panel display in a near future. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:81 ,  Issue: 19 )

Date of Publication:

Nov 2002

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