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Contactless measurement of electrical conductivity of semiconductor wafers using the reflection of millimeter waves

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4 Author(s)
Ju, Yang ; Department of Mechanical Engineering, Tohoku University, Aoba 01, Aramaki, Aoba-ku, Sendai 980-8579, Japan ; Inoue, Kojiro ; Saka, Masumi ; Abe, Hiroyuki

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We present a method for quantitative measurement of electrical conductivity of semiconductor wafers in a contactless fashion by using millimeter waves. A focusing sensor was developed to focus a 110 GHz millimeter wave beam on the surface of a silicon wafer. The amplitude and the phase of the reflection coefficient of the millimeter wave signal were measured by which electrical conductivity of the wafer was determined quantitatively, independent of the permittivity and thickness of the wafers. The conductivity obtained by this method agrees well with that measured by the conventional four-point-probe method. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:81 ,  Issue: 19 )