By Topic

Fabrication and subpicosecond optical response of low-temperature-grown GaAs freestanding photoconductive devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Adam, R. ; Institute of Thin Films and Interfaces, Research Center Jülich, D-52425 Jülich, Germany ; Mikulics, M. ; Forster, A. ; Schelten, J.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We have fabricated and tested freestanding low-temperature-grown GaAs photoconducting devices exhibiting subpicosecond photoresponse. The epitaxially grown thin-film microswitches were transferred on top of sapphire and Si/SiO2 substrates and integrated with Ti/Au coplanar strip transmission lines. Our devices exhibited above 200 V breakdown voltages and dark currents at 100 V below 3×10-7 A. The photoresponse of our microswitches was measured using electro-optic sampling technique with 100-fs-wide laser pulses at wavelengths of 810 nm and 405 nm as the excitation sources. For 810-nm excitation, we measured 0.55-ps-wide electrical transients with voltage amplitudes of up to 1.3 V. The ultraviolet excitation resulted in 1.35-ps-wide transients due to the hot carriers generation and intraband relaxation. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:81 ,  Issue: 18 )