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Selective manipulation of InAs quantum dot electronic states using a lateral potential confinement layer

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3 Author(s)
Kim, Eui-Tae ; Nanostructure Materials and Devices Laboratory, Departments of Materials Science and Physics, University of Southern California, Los Angeles, California 90089-0241 ; Chen, Zhonghui ; Madhukar, Anupam

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To further the objective of controlled manipulation of the electronic states in epitaxial island quantum dots (QDs), we introduce the notion of a lateral potential confinement layer (LPCL) whose judicious placement during island capping allows selective impact on ground and excited electron and hole states. The energy states of InAs/In0.15Ga0.85As QDs are manipulated using 10-monolayer-thick In0.15Al0.25Ga0.60As LPCLs positioned at the bottom, upper, and top region of the QDs. The changes in the photoluminescence (PL) and PL excitation spectra reveal the nature of the electronic transitions impacted selectively through the spatial charge distributions of the states involved. © 2002 American Institute of Physics.

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Applied Physics Letters  (Volume:81 ,  Issue: 18 )