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Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves

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6 Author(s)
Kim, J.G. ; Sarnoff Corporation, CN5300, Princeton, New Jersey 08543-5300 ; Shterengas, L. ; Martinelli, R.U. ; Belenky, G.L.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1517176 

We have characterized 2.5-μm-wavelength InGaAsSb/AlGaAsSb/GaSb two-quantum-well diode lasers that emit 1 W continuous waves from a 100-μm-wide aperture at a temperature of 12 °C. The threshold current density is 250 A/cm2, and the external quantum efficiency near threshold is 0.36. The wall–plug efficiency reaches a maximum of 12% at a current of 2 A. Operating in the pulsed-current mode, the devices output nearly 5 W at 20 °C. These lasers exhibit internal losses of about 4 cm-1 and differential series resistances of about 0.1 Ω. A broad-waveguide design lowers internal losses, and highly doped transition regions between the cladding layers and the GaSb reduces series resistance. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:81 ,  Issue: 17 )

Date of Publication:

Oct 2002

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