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Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC

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4 Author(s)
Arulkumaran, S. ; Research Center for Micro-Structure Devices, Nagoya Institute of Technology, Showa-ku, Gokiso-cho, Nagoya 466-8555, Japan ; Egawa, T. ; Ishikawa, H. ; Jimbo, T.

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The drain-current collapse at high drain voltage has been studied in AlGaN/GaN high-electron-mobility transistors (HEMTs) on both semi-insulating (SI)–SiC and sapphire substrates using small frequency (120 Hz) sinusoidal wave superimposed dc IDS–VDS characteristics. Low drain-current collapses were observed in AlGaN/GaN HEMTs on SI–SiC substrate when compared with the HEMTs on sapphire substrates. Two and three thermally activated deep traps were observed on SiC-based and sapphire-based HEMTs, respectively. The existence of an additional deep trap (ΔE=0.61 eV) could be associated with the material defects/ dislocations responsible for the severe drain current collapse in sapphire-based HEMTs. The white-light illuminated IDS–VDS characteristics support the existence of more number of deep traps in the sapphire-based HEMTs. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:81 ,  Issue: 16 )

Date of Publication:

Oct 2002

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