The influence of stacking faults (SFs) on the performance of 4H–SiC (112¯0) Schottky barrier diodes fabricated on the epilayer grown on the substrate which was grown in [112¯0] direction by the sublimation method was investigated. The number of SFs under the Schottky electrode was determined by KOH etching of (11¯00) face cross section. SFs were found to have a severe influence on the leakage current of reverse characteristic and Schottky barrier height. The leakage current is increased even though a few SFs exist under the electrode. The Schottky barrier height is also affected by the SF under the electrode. © 2002 American Institute of Physics.