By Topic

Low-temperature operation of AlGaN single-quantum-well light-emitting diodes with deep ultraviolet emission at 285 nm

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Chitnis, A. ; Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208 ; Pachipulusu, R. ; Mandavilli, V. ; Shatalov, M.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We present a study of the electrical and optical characteristics of 285 nm emission deep ultraviolet light-emitting diodes (LED) at temperatures from 10 to 300 K. At low bias, our data show the tunneling carrier transport to be the dominant conduction mechanism. The room-temperature performance is shown to be limited mostly by poor electron confinement in the active region and a pronounced deep level assisted recombination but not by the hole injection into the active region. At temperatures below 100 K, the electroluminescence peak intensity increases by more than one order of magnitude indicating that with a proper device design and improved material quality, milliwatt power 285 nm LED are viable. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:81 ,  Issue: 16 )