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Browse Journals & Magazines > Applied Physics Letters ...> Volume:81 Issue:15 Help

Thickness determination of very thin SiO2 films on Si by electron-induced x-ray emission spectroscopy

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4 Author(s)
Hombourger, C. ; Laboratoire de Chimie Physique-Matière et Rayonnement, Université Pierre et Marie Curie, UMR Centre National de la Recherche Scientifique 7614, 11 rue Pierre et Marie Curie, F-75231 Paris Cedex 05, France ; Jonnard, P. ; Filatova, E.O. ; Lukyanov, V.

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Electron-induced x-ray emission spectroscopy (EXES) associate with a semi-empirical electron scattering model is used to determine thicknesses between 2 and 21 nm of SiO2 films on Si. The small charging effect occurring upon electron irradiation is taken into account by introducing a retarding potential in the model. The results are in very close agreement with those obtained by spectroscopic ellipsometry and x-ray reflectometry. It is demonstrated that the EXES with its model is a well-suited method for the quantitative analysis of thin insulating films with an uncertainty lower than 5%. © 2002 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:81 ,  Issue: 15 )

Date of Publication: Oct 2002

Page(s):
2740 - 2742
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1511281
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Oct 2002

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