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Photoluminescence upconversion in 4H–SiC

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7 Author(s)
Wagner, Mt. ; Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden ; Ivanov, I.G. ; Storasta, L. ; Bergman, J.P.
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Efficient photoluminescence upconversion is observed in 4H–SiC samples containing both the UD-3 defect and the titanium impurity. In this process, the titanium photoluminescence emission with no-phonon (NP) lines at 2.848 eV (A0) and 2.789 eV (B0) can be excited by tuning the laser to the NP line of UD-3 at 1.356 eV. In samples containing either only UD-3 or only titanium, a different photoluminescence upconversion process can be observed, which occurs at photon energies higher than ∼1.5 eV without exhibiting sharp features. At least one of the two processes generates both free electrons and free holes and can, therefore, be a candidate for an important recombination channel. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:81 ,  Issue: 14 )

Date of Publication:

Sep 2002

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