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Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers

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3 Author(s)
Tansu, N. ; Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, Wisconsin 53706-1691 ; Kirsch, Nicholas J. ; Mawst, L.J.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1511290 

Metalorganic chemical vapor deposition-grown In0.4Ga0.6As0.995N0.005 quantum well (QW) lasers have been realized, at an emission wavelength of 1.295 μm, with threshold and transparency current densities as low as 211 A/cm2 (for L=2000 μm) and 75 A/cm2, respectively. The utilization of a tensile-strained GaAs0.67P0.33 buffer layer and GaAs0.85P0.15 barrier layers allows a highly-compressively-strained In0.4Ga0.6As0.995N0.005 QW to be grown on a high-Al-content lower cladding layer, resulting in devices with high current injection efficiency inj∼97%). © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:81 ,  Issue: 14 )

Date of Publication:

Sep 2002

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