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Browse Journals & Magazines > Applied Physics Letters ...> Volume:81 Issue:13 Help

Study of photocurrent characteristics in PbSrSe thin films for infrared detection

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3 Author(s)
Yang, H.F. ; Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030, People’s Republic of China ; Shen, W.Z. ; Pang, Q.J.

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We have carried out a detailed investigation of photocurrent spectra in Pb1-xSrxSe thin films grown by molecular-beam epitaxy on BaF2 substrates with Sr composition from 0.066 to 0.276 under different temperatures from 77 to 300 K. Strong room temperature infrared detection has been demonstrated with the wavelength from 1.0 to 3.1 μm. By employing a diffusion-recombination model to analyze the temperature- and Sr composition-dependent photocurrent, we find that the photocurrent in the investigated PbSrSe thin films is dominated by bulk excitation, recombination, and transport processes. For the application of infrared detection, the optimal thickness for PbSrSe thin films should be less than 2.5 μm. © 2002 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:81 ,  Issue: 13 )

Date of Publication: Sep 2002

Page(s):
2394 - 2396
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1509474
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Sep 2002

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