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Double epitaxial lateral overgrown (D–ELO) GaN grown by metalorganic vapor phase epitaxy on sapphire substrates was characterized using Raman mapping and finite element analysis. Reductions in stress variations at the D–ELO top surface with respect to single ELO GaN were achieved. Stress near the top surface was mainly attributed to the presence of voids on top of the upper dielectric mask. © 2002 American Institute of Physics.