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Raman mapping investigations and finite element analysis of double epitaxial lateral overgrown GaN on sapphire substrates

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4 Author(s)
Benyoucef, M. ; H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom ; Kuball, M. ; Beaumont, B. ; Bousquet, V.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1509860 

Double epitaxial lateral overgrown (D–ELO) GaN grown by metalorganic vapor phase epitaxy on sapphire substrates was characterized using Raman mapping and finite element analysis. Reductions in stress variations at the D–ELO top surface with respect to single ELO GaN were achieved. Stress near the top surface was mainly attributed to the presence of voids on top of the upper dielectric mask. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:81 ,  Issue: 13 )

Date of Publication:

Sep 2002

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