Cart (Loading....) | Create Account
Close category search window

Properties of AlxGa1-xN layers grown by plasma-assisted molecular-beam epitaxy under Ga-rich conditions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
He, L. ; Department of Electrical Engineering, Virginia Commonwealth University, Richmond, Virginia 23220 ; Reshchikov, M.A. ; Yun, F. ; Huang, D.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

AlxGa1-xN films were grown by plasma-assisted molecular-beam epitaxy on (0001) sapphire substrates under Ga-rich conditions. To control the AlxGa1-xN composition over the entire range, the Al and Ga arrival rates were fixed while the nitrogen arrival rate was varied. We have found that the Al fraction increased with decreasing N flow due to preferentially favorable bonding of Al and N over Ga and N. Consequently, the growth rate decreased as the Al mole fraction increased. A photoluminescence quantum efficiency at 15 K was markedly higher for the AlxGa1-xN layers grown under Ga-rich conditions (3%–48%) compared to the layers grown under N-rich conditions (1%–10%), indicating much reduced nonradiative recombination in samples grown under Ga-rich conditions. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:81 ,  Issue: 12 )

Date of Publication:

Sep 2002

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.