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Properties of AlxGa1-xN layers grown by plasma-assisted molecular-beam epitaxy under Ga-rich conditions

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6 Author(s)
He, L. ; Department of Electrical Engineering, Virginia Commonwealth University, Richmond, Virginia 23220 ; Reshchikov, M.A. ; Yun, F. ; Huang, D.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1506206 

AlxGa1-xN films were grown by plasma-assisted molecular-beam epitaxy on (0001) sapphire substrates under Ga-rich conditions. To control the AlxGa1-xN composition over the entire range, the Al and Ga arrival rates were fixed while the nitrogen arrival rate was varied. We have found that the Al fraction increased with decreasing N flow due to preferentially favorable bonding of Al and N over Ga and N. Consequently, the growth rate decreased as the Al mole fraction increased. A photoluminescence quantum efficiency at 15 K was markedly higher for the AlxGa1-xN layers grown under Ga-rich conditions (3%–48%) compared to the layers grown under N-rich conditions (1%–10%), indicating much reduced nonradiative recombination in samples grown under Ga-rich conditions. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:81 ,  Issue: 12 )

Date of Publication:

Sep 2002

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