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Optical loss mechanisms in GeSiON planar waveguides

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6 Author(s)
Osinsky, A.V. ; Science and Technology, Corning Incorporated, Corning, New York 14831 ; Bellman, R.A. ; Akwani, I.A. ; Sachenik, P.A.
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A double frequency overtone of the fundamental NH bond related vibration was found to dominate the optical loss in the 1.5–1.6 μm range in high index GeSiON-based planar waveguides deposited by plasma-enhanced chemical vapor deposition using hydrogen-based precursors. The fundamental NH bond-related absorption and its double frequency overtone were measured to be ∼560 cm-1 and 1.8 cm-1, respectively, resulting in their ratio of 310±10. The optical loss, extracted from analysis of the NH-related absorption is consistent with the directly measured optical loss in the waveguide structures. It was shown that using the deuterated precursors results in incorporation of ND bonds in the GeSiON films. The NH bond absorption band was eliminated in the deuterated films, leading to low optical losses in the communication band. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:81 ,  Issue: 11 )

Date of Publication:

Sep 2002

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