Cart (Loading....) | Create Account
Close category search window

Characterization of a diamond p-n junction using electron-beam-induced current and cathodoluminescence

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Sekiguchi, T. ; Nanomaterials Laboratory, National Institute for Materials Science, Tsukuba 305-0047, Japan ; Koizumi, Satoshi

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We have characterized a diamond p-n junction by means of electron-beam-induced current (EBIC) and cathodoluminescence (CL). The diamond p-n junction was fabricated by growing a B-doped p-type layer and a P-doped n-type layer on the {111} diamond substrate by microwave plasma enhanced chemical vapor deposition. The cross section of p-n junction was revealed by the mesa etching. The substrate, B- and P-doped layers were distinguished by CL spectra. The EBIC profiles across the p-n junction were recorded under various reverse bias conditions. These data confirmed that the p-n junction was actually formed at the interface between B- and P-doped layers. The energy-band profile suggests that the carrier concentration of P-doped layer is more than ten times higher than that of B-doped layer. The observed results strongly support the fact that the UV luminescence is emitted from the p-n junction region in diamond light-emitting diode. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:81 ,  Issue: 11 )

Date of Publication:

Sep 2002

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.