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Effect of 3 MeV electron irradiation on the photoluminescence properties of Eu-doped GaN

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6 Author(s)
Nakanishi, Y. ; Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku, Toyohashi 441-8580, Japan ; Wakahara, A. ; Okada, H. ; Yoshida, A.
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The effect of 3 MeV electron irradiation on the photoluminescence (PL) properties of Eu-doped GaN was investigated. Eu was introduced into GaN epitaxial layers grown on sapphire substrates by ion implantation. The peak concentration of implanted Eu was found to be a few atomic percent. The electron dose was in the range of 1016–3×1017cm-2. PL was measured in the temperature range of 13–295 K by using a He–Cd laser as the excitation source. PL intensity corresponding to the transition of 5D0-7F2 in Eu3+ was hardly dependent on the electron fluence. In contrast, the PL intensity of the near-band-edge emission from undoped GaN decreased when increasing the electron fluence. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:81 ,  Issue: 11 )