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Sub-100 nm SrBi2Ta2O9 film with ultrathin BiTaO4 capping layer for 3 V or lower-voltage ferroelectric memory operation

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5 Author(s)
Lim, M. ; Symetrix Corporation, 5055 Mark Dabling Boulevard, Colorado Springs, Colorado 80918-3862 ; Joshi, V. ; Narayan, S. ; Celinska, J.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1496499 

This letter proposes an enhanced 700 °C process to improve the dielectric breakdown strength and surface roughness of sub-100 nm SrBi2Ta2O9 (SBT) film with a thin (≪20 nm) BiTaO4 (BT) layer for the 3 V or lower voltage ferroelectric memory. The process temperature for rapid thermal annealing and furnace annealing is performed at or below 700 °C. The BT layer is used as a capping layer on top of SBT film. It improves the dielectric breakdown strength (1.2 MV/cm) of SBT film without sacrificing other ferroelectric properties. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:81 ,  Issue: 10 )

Date of Publication:

Sep 2002

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