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A unified triode/saturation model with an improved continuity in the output conductance suitable for CAD of VLSI circuits using deep sub-0.1 μm NMOS devices

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2 Author(s)
Chen, Y.G. ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Kuo, J.B.

This paper reports a unified triode/saturation model with an improved continuity in the output conductance suitable for CAD of VLSI circuits using deep sub-0.1 μm NMOS devices. As verified by the experimental data, the model shows an accurate prediction of the output conductance characteristics

Published in:
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:15 ,  Issue: 2 )

Date of Publication: Feb 1996

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