This paper reports a unified triode/saturation model with an improved continuity in the output conductance suitable for CAD of VLSI circuits using deep sub-0.1 μm NMOS devices. As verified by the experimental data, the model shows an accurate prediction of the output conductance characteristics
Published in:
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
(Volume:15
,
Issue:
2
)
Date of Publication: Feb 1996