By Topic

Ferromagnetic semiconductor (In,Ga,Mn)As with Curie temperature above 100 K

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Slupinski, T. ; Kanagawa Academy of Science and Technology, 3-2-1 Sakado, Takatsu, Kawasaki 213-0012, Japan ; Munekata, H. ; Oiwa, A.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We have grown (InyGa1-y)1-xMnxAs ferromagnetic semiconductor layers with Mn composition of x up to 0.13 on InP substrates by molecular beam epitaxy. Near the lattice-matched composition, i.e., y∼0.53, the Curie temperature increases linearly with the ferromagnetically effective Mn composition xeff, following the empirical equation TC=1300×xeff. We obtained Curie temperatures above 100 K when x is relatively high (x≫0.1; xeff≥0.08) and the hole concentration is of the order of 1019cm-3. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:80 ,  Issue: 9 )