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Ferromagnetic semiconductor (In,Ga,Mn)As with Curie temperature above 100 K

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3 Author(s)
Slupinski, T. ; Kanagawa Academy of Science and Technology, 3-2-1 Sakado, Takatsu, Kawasaki 213-0012, Japan ; Munekata, H. ; Oiwa, A.

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We have grown (InyGa1-y)1-xMnxAs ferromagnetic semiconductor layers with Mn composition of x up to 0.13 on InP substrates by molecular beam epitaxy. Near the lattice-matched composition, i.e., y∼0.53, the Curie temperature increases linearly with the ferromagnetically effective Mn composition xeff, following the empirical equation TC=1300×xeff. We obtained Curie temperatures above 100 K when x is relatively high (x≫0.1; xeff≥0.08) and the hole concentration is of the order of 1019cm-3. © 2002 American Institute of Physics.

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Applied Physics Letters  (Volume:80 ,  Issue: 9 )