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2-D mesh adaption and flux discretizations for dopant diffusion modeling

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2 Author(s)
Chih-Chuan Lin ; Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA ; M. E. Law

Mesh generation and adaption for solving dopant diffusion in process simulation is a difficult task, complicated by both the moving boundaries of oxide growth and the time dependence of the solutions. For both computational and ease of use reasons, automatic mesh generation and discretization error control is desirable. This paper describes an approach based on local error estimates to refine the mesh. The results presented in this paper extend our previous work to two-dimensional problems. The implementation of this approach is done in a process simulator, the Florida Object-Oriented Process Simulator. Several test cases are described to demonstrate the effectiveness of the algorithms

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IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems  (Volume:15 ,  Issue: 2 )