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Different behavior of photoluminescence anisotropy in porous silicon layers made by polarized-light-assisted electrochemical etching

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1 Author(s)
Koyama, Hideki ; Technology Education Group, Department of Practical Life Studies, Hyogo University of Teacher Education, Yashiro, Hyogo 673-1494, Japan

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1449538 

Luminescent porous silicon (PSi) layers have been made on n-type Si wafers by anodization in a HF solution under illumination with linearly polarized light. It is observed that the photoluminescence from samples anodized at a current density of 30 mA/cm2 and slightly oxidized electrochemically for passivation exhibits a significant anisotropy in polarization memory (PM): the degree of PM becomes maximum when the vector electric field (Eexc) of excitation laser light is parallel to that (Eetch) of the light used during anodization, and minimum when Eexc is perpendicular to Eetch. These maxima and minima are in totally different directions from those reported previously. In addition, the anisotropy is found to be weak at low anodization current density of 2.3 mA/cm2. These experimental results are discussed based on the electrochemical, rather than photochemical, thinning of Si-nanocrystal assemblies in PSi layers. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:80 ,  Issue: 6 )

Date of Publication:

Feb 2002

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