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Quantitative comparison of trimethylindium sources and assessment of their suitability for low threshold 980 nm InGaAs/GaAs lasers grown by chemical beam epitaxy

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8 Author(s)
Maclean, J.O. ; QinetiQ, Malvern Technology Centre, St. Andrew’s Road, Malvern, Worcs WR14 3PS, United Kingdom ; Martin, T. ; Houlton, M.R. ; Calcott, P.D.J.
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Metalorganic compounds used as precursors for epitaxial growth by metalorganic vapor phase epitaxy (MOVPE) and chemical beam epitaxy (CBE), may be contaminated with oxygen-containing impurities. These impurities are a particular problem in the precursor purification process when they, or their adducts, are of similar volatility to the precursor. We report that improvements in precursor purity, in this case trimethylindium (TMIn), may be quantitatively assessed through growth at low temperatures by CBE and subsequent two-stage testing. Indium-containing III–V semiconductor test structures were characterized first using secondary ion mass spectrometry (SIMS) and second by photoluminescence (PL) lifetime measurements which sensitively probe the presence of nonradiative centers. A factor of 4 improvement in PL lifetime was found for Epipure™ TMIn as compared with conventional adduct-purified TMIn. The Epipure™ grade of TMIn was used for 980 nm lasers. State-of-the-art threshold currents (162 A cm-2) and low internal optical cavity losses (3.9 cm-1) were obtained using CBE growth at the very low temperature of 540 °C. © 2002 American Institute of Physics.

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Applied Physics Letters  (Volume:80 ,  Issue: 6 )