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Ferroelectric properties of laser-ablated Sr1-xAxBi2Ta2O9 thin films (where A=Ba, Ca)

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5 Author(s)
Das, Rasmi R. ; Department of Physics, University of Puerto Rico, San Juan, Puerto Rico 00931-3343 ; Bhattacharya, P. ; Perez, W. ; Katiyar, Ram S.
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Bismuth-layered ferroelectric thin films of Sr1-xAxBi2Ta2O9, with composition x=0 and 0.2, were fabricated by using the pulsed-laser deposition technique. Structural characterization of the films by x-ray diffraction and atomic force microscopy, revealed that the films are polycrystalline in nature with average grain size of 180 nm. The films displayed spherical grains with a surface roughness of 12 nm. The ferroelectric measurements of Sr0.8Ba0.2Bi2Ta2O9, SrBi2Ta2O9, and Sr0.8Ca0.2Bi2Ta2O9 showed saturated hysteretic behavior with remanent polarization (2Pr) of 23.5, 17.9, 14 μC/cm2 and coercive field (Ec) of 31.06, 74.2, 86.3 kV/cm for a maximum applied electric field of 360 kV/cm. Films exhibited minimal (≤17%) degradation of polarization for up to 1010 switching cycles. It was observed that the coercive field decreased with increase in the ionic size of partially substituted cations. The leakage current density of films were found to be of the order of ∼10-8A/cm2 for up to a breakdown field of about 75 kV/cm. © 2002 American Institute of Physics.

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Applied Physics Letters  (Volume:80 ,  Issue: 4 )