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Investigation of direct and indirect band gaps of [100]-oriented nearly strain-free β-FeSi2 films grown by molecular-beam epitaxy

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5 Author(s)
Takakura, Ken-ichiro ; Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan ; Hiroi, Noriyoshi ; Suemasu, T. ; Chichibu, Shigefusa F.
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Optical absorption (OA) spectra of [100]-oriented, nearly strain-free β-FeSi2 continuous films grown by molecular-beam epitaxy were investigated. Although the film is a multidomain epilayer, the OA spectra of the annealed film were fitted well by the sum of the contributions from both direct and indirect absorption transitions for a wide range of temperatures from 77 to 300 K. The indirect absorption edge of 0.78 eV obtained at 77 K agreed with the effective band gap energy obtained from temperature dependence of the carrier density. © 2002 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:80 ,  Issue: 4 )

Date of Publication:

Jan 2002

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