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60Co gamma-irradiation-induced defects in n-GaN

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7 Author(s)
Umana-Membreno, G.A. ; Department of Electrical and Electronic Engineering, The University of Western Australia, Crawley WA 6009, Australia ; Dell, J.M. ; Hessler, T.P. ; Nener, B.D.
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Transient capacitance measurements of Schottky diodes fabricated on nominally undoped n-type GaN exposed to 60Co gamma irradiation indicate the introduction of two defect levels with thermal activation energies of 89±6 and 132±11 meV. While the emission characteristics of these defects manifest significant broadening, their parameters are consistent with reported electron-irradiation-induced nitrogen-vacancy related centers. Three deep-level defects present before irradiation exposure with activation energies of 265, 355, and 581 meV were found to remain unaffected for cumulative gamma-ray doses up to 21 Mrad(Si). © 2002 American Institute of Physics.

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Applied Physics Letters  (Volume:80 ,  Issue: 23 )