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Impurity-free disordering mechanisms in GaAs-based structures using doped spin-on silica layers

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7 Author(s)
Deenapanray, Prakash N.K. ; Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia ; Gong, Bin ; Lamb, R.N. ; Martin, A.
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We have used photoluminescence, deep level transient spectroscopy and x-ray photoelectron spectroscopy to investigate the mechanisms of impurity-free disordering in GaAs-based structures using doped spin-on silica layers. We demonstrate that VGa is efficiently converted into arsenic-antisite, AsGa, related defects (EL2-type defects) when the GaAs layer is under compressive stress. We propose that the efficient formation of EL2-type defects reduces the efficiency of impurity-free interdiffusion of GaAs/AlGaAs quantum wells. © 2002 American Institute of Physics.

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Applied Physics Letters  (Volume:80 ,  Issue: 23 )