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Enhanced channel mobility of 4H–SiC metal–oxide–semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation

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6 Author(s)
Schorner, Reinhold ; SiCED Electronics Development Ltd, Paul Gossen-Str. 100, D-91052 Erlangen, Germany ; Friedrichs, P. ; Peters, Dethard ; Stephani, Dietrich
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This work presents improved channel mobility of n-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) on 4H–SiC, achieved by gate-oxide nitridation in nitric oxide. Lateral enhancement mode MOSFETs were fabricated using standard polycrystalline silicon gate process and 900 °C annealing for the source and drain contacts. The low field mobility of these MOSFETs was as high as 48 cm2/Vs together with a threshold voltage of 0.6 V, while the interface state density—determined from the subthreshold slope—was about 3×1011eV-1cm-2. The 43-nm-thick gate oxide of coprocessed metal–oxide–semiconductor structures exhibited a breakdown field strength of 9 MV/cm. © 2002 American Institute of Physics.

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Applied Physics Letters  (Volume:80 ,  Issue: 22 )